Ion chemistry of tetramethylsilane (TMS) by electron impact Sham Singh Saini,Praveen Bhatt A B ST R A C T: We studied electron impact ionization of tetramethylsilane (TMS), Si(CH3)4, which is utilized in plasma polymerization applications, using a semi empirical Jain-Khare theoretical technique. Absolute partial cross sections for the formation of all fragment ions were measured by Jain-Khare method from threshold up to 120 eV. We obtained the following sixteen ions: CH3 + , Si+ , SiH+ , SiH3 + , SiCH2 + , SiCH3 + , HSiCH3 + , H2SiCH3 + , SiC2H + , SiC2H3 + , SiC2H5 + ,Si(CH3)2 + , HSi(CH3)2 + , Si(CH3)3 + , HSi(CH3)3 + & Si(CH3)4 + . The agreement between our measured absolute partial ionization cross-sections & R.Basner et al data sets obtained by experimental technique are generally good for the silicon-containing fragment ions. The earlier work done is for 90 eV & here we have extended it up to from threshold to 120 eV. aygrt.isrj.net/UploadedData/2880.pdf
Posted on: Fri, 13 Sep 2013 06:52:54 +0000
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