Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones SEOUL, Korea – July 24, 2013 – Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry’s first mass production of three gigabyte (GB) low power double data rate 3 (LPDDR3) mobile DRAM, the highest density mobile memory solution for next-generation smartphones, which will bring a generation shift to the market from the 2GB packages that are widely used in current mobile devices. The Samsung 3GB LPDDR3 mobile DRAM uses six of the industry’s smallest 20-nanometer (nm) class* four gigabit (Gb) LPDDR3 chips, in a symmetrical structure of two sets of three chips stacked in a single package only 0.8 millimeters high. With a full line-up of package dimensions, Samsung’s new ultra-slim memory solutions will enable thinner smartphone designs and allow for additional battery space, while offering a data transfer speed of up to 2,133 megabits per second (Mbps) per pin. “Three gigabyte mobile DRAM will be adopted in the most up-to-date, high-end smartphones starting in the second half of this year − an initial adoption that will expand to most high-end smartphones worldwide next year,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “We will develop a new 3GB LPDDR3 solution based on four 6Gb LPDDR3 DRAM chips by symmetrically stacking two chips on each side, which will boost smartphone performance to the next level by year-end.” With the increased mobile DRAM capacity, users can enjoy seamless high-quality, Full HD video playback and faster multitasking on their smartphones. Also, the new LPDDR3 speeds up data downloading and is able to offer full support for LTE-A (LTE Advanced) service, a next-generation mobile telecommunication standard.
Posted on: Thu, 25 Jul 2013 11:00:40 +0000
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